MATEC Web Conf.
Volume 201, 20182017 The 3rd International Conference on Inventions (ICI 2017)
|Number of page(s)||4|
|Section||Invention of electrical engineering system|
|Published online||14 September 2018|
An Innovated 80V-100V High-Side Side-Isolated N-LDMOS Device
Department of Computer Science and Information Engineering, Asia University, 500, Lioufeng Rd., Taichung 41354, Taiwan.
2 School of Software and Microelectronics, Peking University, Beijing, China.
3 Department of Medical Research, China Medical University Hospital, China Medical University, Taichung, Taiwan.
* Corresponding author: firstname.lastname@example.org
We used TCAD Synopsys 3D tools and device simulators to propose an innovative device structure of 80V-100V high-side NLDMOS by using the silicon to silicon-di-oxide ratio with side trench. The high-side can also be developed by placing an NBL structure which can deliver a high as over 200V isolation voltage. The 3D structure can clear see the optimized linear p-top and n-drift region have better charge balance with linear doping profile to get the benchmark breakdown voltage (BVdss) of 80V with on-resistance (Ron) as low as 130 mΩ-mm2 and 100V with on-resistance as low as 175 mΩ-mm2.The linear p-type buried layer using high dosage and lower energy to achieve the better SOA and higher isolation voltage. Optimized linear p-top and PBL can improve Ron by 32.5% compare to other 100V high side device which have done from reference.
© The Authors, published by EDP Sciences, 2018
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