| Issue |
MATEC Web Conf.
Volume 201, 2018
2017 The 3rd International Conference on Inventions (ICI 2017)
|
|
|---|---|---|
| Article Number | 02004 | |
| Number of page(s) | 3 | |
| Section | Invention of electrical engineering system | |
| DOI | https://doi.org/10.1051/matecconf/201820102004 | |
| Published online | 14 September 2018 | |
Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology
1
Department of Computer Science and Information Engineering, Asia University, 500, Lioufeng Rd., Taichung 41354, Taiwan.
2
School of Software and Microelectronics, Peking University, Beijing, China.
3
Department of Medical Research, China Medical University Hospital, China Medical University, Taichung, Taiwan.
* Corresponding author: rickyyang121@asia.edu.tw
High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.
© The Authors, published by EDP Sciences, 2018
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