Open Access
MATEC Web Conf.
Volume 329, 2020
International Conference on Modern Trends in Manufacturing Technologies and Equipment: Mechanical Engineering and Materials Science (ICMTMTE 2020)
Article Number 03079
Number of page(s) 6
Section Mechanical Engineering
Published online 26 November 2020
  1. R. Windisch, A. Knobloch, J. Potemans, Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnects, IEEE Journal of Selected Topics in Quantum Electronics, 5, pp. 166-171 (1999) [Google Scholar]
  2. M. Akbulut, C. Chen, M. Hargis, Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes, IEEE Photon. Technol. Lett., 13, pp. 85-87 (2001) [Google Scholar]
  3. C. Chen, M. Hargis, J. Woodall, E. Yablonovitch, GHz bandwidth GaAs light-emitting diodes, Appl. Phys. Lett., 74, pp. 3140-3142 (1999) [Google Scholar]
  4. A. Bushuev et al, Light emitters for high-speed optoelectronic digital-to-analog conversion, Journal of Physics: Conference Series. IOP Publishing, 1164 (1), 012004 (2019) [Google Scholar]
  5. C. Wu, Design and Layout of Multi GHz Operation of Light Emitting Diodes, CS Mantech Conference, 1, pp. 247-250 (2010) [Google Scholar]
  6. A. Shubert, Temperature and modulation characteristics of resonant-cavity light-emitting diodes, IEEE Journal. Lightwave Techol., 14, 1721 (1996) [Google Scholar]
  7. S. Laref, S. Mec-abih, B. Abbar, B. Bouhafs, A. Laref, First-principle calculations of electronic and positronic properties of AlGaAs, Physica B: Condensed Matter, 396, pp. 169-176 (2007) [CrossRef] [Google Scholar]
  8. A. Schubert, LEDs, FIZMATLIT, 2, 496 (2008) [Google Scholar]
  9. M. Feng, N. Holonyak, Jr., and W. Hafez, Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors, Appl. Phys. Lett., 84, pp. 151-153 (2004) [Google Scholar]
  10. H.W. Then, M. Feng, N. Holonyak, Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping, Appl. Phys. Lett., 91, 033505 (2007) [Google Scholar]
  11. C.H. Wu, G. Walter, H.W. Then, M. Feng, and N. Holonyak, Scaling of light emitting transistor for multi-GHz optical bandwidth, Appl. Phys. Lett., 94, pp. 171101-171103 (2009) [Google Scholar]
  12. G. Walter, C.H. Wu, H.W. Then, M. Feng, and N. Holonyak, 4.3 GHz optical bandwidth light emitting transistor, Appl. Phys. Lett., 94, pp. 241101-241103 (2009) [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.