MATEC Web Conf.
Volume 329, 2020International Conference on Modern Trends in Manufacturing Technologies and Equipment: Mechanical Engineering and Materials Science (ICMTMTE 2020)
|Number of page(s)||6|
|Published online||26 November 2020|
Calculation of light transistor structural parameters based on InGaN – AlGaN heterostructure
1 Vladimir State University, 87 Gorky Street, Vladimir, 600000, Russia
* Corresponding author: firstname.lastname@example.org
The article is devoted to study of building possibility of digital conversion systems based on new optoelectronic principles, which allow to expand the frequency range of conversion, as well as to increase the conversion capacity, thereby increasing the accuracy. The structural parameters of emitting p-n junction for a light-emitting transistor based on p-InGaN – n-AlGaN heterostructure have been investigated.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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