| Issue |
MATEC Web of Conferences
Volume 57, 2016
4th International Conference on Advancements in Engineering & Technology (ICAET-2016)
|
|
|---|---|---|
| Article Number | 01028 | |
| Number of page(s) | 5 | |
| Section | Electronic & Electrical Engineering | |
| DOI | https://doi.org/10.1051/matecconf/20165701028 | |
| Published online | 11 May 2016 | |
Analyzing the effect of gate dielectric on the leakage currents
Lovely Professional University - Phagwara, India
Corresponding author: manish.bansalbti@gmail.com
An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.
Key words: threshold voltage / gate dielectric oxides / subthreshold currents
© Owned by the authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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