Open Access
MATEC Web of Conferences
Volume 61, 2016
The International Seminar on Applied Physics, Optoelectronics and Photonics (APOP 2016)
Article Number 06016
Number of page(s) 4
Section Chapter 6 Optoelectronics and Photonics
Published online 28 June 2016
  1. M.A. Khan, M.S. Shur, J.N. Kuznia, Q. Chen, J. Burm, W. Schaff, Temperature Activated Conductance in Gan/Algan Heterostructure Field-Effect Transistors Operating at Temperatures up to 300-Degrees-C, Appl Phys Lett, 66 (1995) 1083–1085. [CrossRef] [Google Scholar]
  2. S. Yoshida, J. Suzuki, Reliability of metal semiconductor field-effect transistor using GaN at high temperature, J Appl Phys, 84 (1998) 2940–2942. [CrossRef] [Google Scholar]
  3. 3.O. Aktas, Z.F. Fan, S.N. Mohammad, A.E. Botchkarev, H. Morkoc, High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors, Appl Phys Lett, 69 (1996) 3872–3874. [CrossRef] [Google Scholar]
  4. V. Adivarahan, W.H. Sun, A. Chitnis, M. Shatalov, S. Wu, H.P. Maruska, M.A. Khan, 250 nm AlGaN light-emitting diodes, App! Phys Lett, 85 (2004) 2175–2177. [CrossRef] [Google Scholar]
  5. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S.R. Darvish, P. Kung, M. Razeghi, High quantum efficiency AlGaN solar-blind p-i-n photodiodes, App! Phys Lett, 84 (2004) 1248–1250. [CrossRef] [Google Scholar]
  6. J.Y. Duboz, N. Grandjean, F. Omnes, J.L. Reverchon, M. Mosca, Solar blind detectors based on AlGaN grown on sapphire, E-MRS 2004 Fall Meeting Symposia C and F, 2 (2005) 964–971. [Google Scholar]
  7. A. Dadgar, M. Poschenrieder, J. Blasing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, F.A. Ponce, E. Kohn, A. Krost, MOVPE growth of GaN on Si(111) substrates, J Cryst Growth, 248 (2003) 556–562. [CrossRef] [Google Scholar]
  8. G.Y. Zhao, H. Ishikawa, H. Jiang, T. Egawa, T. Jimbo, M. Umeno, Optical absorption and photoluminescence studies of n-type GaN, Jpn J App! Phys 2, 38 (1999) L993–L995. [Google Scholar]
  9. S. Nikishin, G Kipshidze, V. Kuryatkov, K. Choi, I. Gherasoiu, L.G. de Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Y. Kudryavtsev, H. Temkin, Gas source molecular beam epitaxy of high quality AlxGal-xN (0 <= x <= 1) on Si(111), Journal of Vacuum Science & Technology B-an International Journal Devoted to Microelectronics and Nanometer Structures-Processing Measurement and Phenomena, 19 (2001) 1409–1412. [CrossRef] [Google Scholar]
  10. M.A. Sanchez-Garcia, E. Calleja, F.B. Naranjo, F.J. Sanchez, F. Calle, E. Munoz, A.M. Sanchez, F.J. Pacheco, S.I. Molina, MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects, J Cryst Growth, 202 (1999) 415–418. [CrossRef] [Google Scholar]
  11. K. Cheng, M. Leys, J. Derluyn, K. Balachander, S. Degroote, M. Germain, G Borghs, AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE, Physica Status Solidi C - Current Topics in Solid State Physics, Vol 5, No 6, 5 (2008) 1600–1602. [Google Scholar]
  12. E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, P. Gibart, Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, App! Phys Lett, 79 (2001) 3230–3232. [CrossRef] [Google Scholar]
  13. W. Liu, M.F. Li, S.J. Xu, K. Uchida, K. Matsumoto, Phonon-assisted photoluminescence in wurtzite GaN epilayer, Semicond Sci Tech, 13 (1998) 769–772. [CrossRef] [Google Scholar]
  14. A. Sedhain, J. Li, J.Y. Lin, H.X. Jiang, Probing exciton-phonon interaction in AN epilayers by photoluminescence, App! Phys Lett, 95 (2009). [Google Scholar]
  15. L. Bergman, M. Dutta, C. Balkas, R.F. Davis, J.A. Christman, D. Alexson, R.J. Nemanich, Raman analysis of the El and Al quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AN, J Appl Phys, 85 (1999) 3535–3539. [CrossRef] [Google Scholar]
  16. B. Jahnen, M. Albrecht, W. Dorsch, S. Christiansen, H.P. Strunk, D. Hanser, R.F. Davis, Pinholes, dislocations and strain relaxation in InGaN, Mrs Internet J N S R, 3 (1998) art. no.-39. [Google Scholar]
  17. H. Sasaki, S. Kato, T. Matsuda, Y. Sato, M. Iwami, S. Yoshida, Investigation of surface defect structure originating in dislocations in AlGaN/GaN epitaxial layer grown on a Si substrate, J Cryst Growth, 298 (2007) 305–309. [CrossRef] [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.