MATEC Web Conf.
Volume 232, 20182018 2nd International Conference on Electronic Information Technology and Computer Engineering (EITCE 2018)
|Number of page(s)||4|
|Section||Circuit Simulation, Electric Modules and Displacement Sensor|
|Published online||19 November 2018|
Simulation Study of Overcurrent Turn-off Capability in 4500V IGBT
Global Energy Interconnection Research Institute co., Ltd., Beijing, 100192, CHN
2 State Key Laboratory of Advanced Power Transmission Technology, Beijing, 100192, CHN
a Corresponding author: firstname.lastname@example.org
According to the requirement of IGBT's over-current turn-off capability, this paper analyzes the factors affecting the dynamic latch-up of IGBT chip during the over-current turn-off process, including the gate width of IGBT cell, the doping concentration of back P + collector and the dVce/dt when the IGBT is turned off. The simulation results show that the anti-dynamic latch-up capability of IGBT can be effectively improved by decreasing the gate width and back P + collector doping concentration. Through multi-cell parallel simulation, it is found that current concentration exists in the process of overcurrent trun-off, which leads to the further increase of the lattice temperature, and the overcurrent turn-off capability declines.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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