MATEC Web Conf.
Volume 232, 20182018 2nd International Conference on Electronic Information Technology and Computer Engineering (EITCE 2018)
|Number of page(s)||5|
|Section||Circuit Simulation, Electric Modules and Displacement Sensor|
|Published online||19 November 2018|
Development and optimization of 4.5kV IGBT for power system
Global Energy Interconnection Research Institute Company Limited, Beijing, 102209, China
2 State Key Lab of Advanced Power Transmission Technology, Beijing, 102209, China
a Corresponding author: email@example.com
In this paper, a 4500V IGBT is investigated by device simulation. The substrate resistivity and thickness of 4500V IGBT are determined by simulation, and the appropriate implantation dose of field stop layer is determined by the simulation. The test results show that the device can not meet the application requirements of power system, so we optimize the key parameters such as saturation voltage and safe operating area. The optimized device was fabricated and the experimental results show that the breakdown voltage is 6110V, the saturation voltage is 2.6V, and the maximum controllable turn-off current is 160A, which can well meet the simulation expectation and application requirements of power system.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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