Features wetting and anisotropy of interfacial energy in a metal particle-silicon system

¹ Don State Technical University, 344000 Rostov-on-Don, Russia
² North-Caucuses Federal University, 355009 Stavropol, Russia
³ Kabardino-Balkarian State University, 360004 Nalchik, Russia

^* Corresponding author: Ludmilochka529@mail.ru

Abstract

In this paper, we propose a technique for estimating the wetting and anisotropy of the interfacial energy at the interface stabilized by organic compounds of metal particles (cobalt, copper) and semiconductor substrate based on the construction of the Winterbottom equilibrium shape of the crystal. The effective contact angle and the ratio of interphase energies at the particle-substrate interface are calculated from the experimental data of the geometric characteristics of the particles obtained by analyzing the AFM images of the samples. The accuracy of the evaluation of the effective contact angle for all systems is not less than 0.5 °. It was found that the phenomenon of incomplete wetting is observed in the systems under study. The work of adhesion in the systems under consideration is evaluated. With an increase in the effective contact angle, the ratio of the area of contact to V^2/3 (V-volume of the particle) in different directions and the work of adhesion is nonlinear. The obtained dependences are qualitatively consistent with thermodynamic states and known data for other systems