| Issue |
MATEC Web Conf.
Volume 201, 2018
2017 The 3rd International Conference on Inventions (ICI 2017)
|
|
|---|---|---|
| Article Number | 01002 | |
| Number of page(s) | 3 | |
| Section | Invention of mechanical system | |
| DOI | https://doi.org/10.1051/matecconf/201820101002 | |
| Published online | 14 September 2018 | |
Sensitivity Study of Polysilicon Nanowire Based on Scattering and Quantum Mechanics Models
1
Department of Computer Science and Information Engineering, Asia University, 500, Lioufeng Rd., Taichung 41354, Taiwan.
2
School of Software and Microelectronics, Peking University, Beijing, China.
3
Department of Medical Research, China Medical University Hospital, China Medical University, Taichung, Taiwan.
* Corresponding author: rickyyang121@asia.edu.tw
In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.
© The Authors, published by EDP Sciences, 2018
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