| Issue |
MATEC Web Conf.
Volume 130, 2017
The International Conference on Composite Material, Polymer Science and Engineering (CMPSE2017)
|
|
|---|---|---|
| Article Number | 08004 | |
| Number of page(s) | 4 | |
| Section | Thin film and coating technology | |
| DOI | https://doi.org/10.1051/matecconf/201713008004 | |
| Published online | 25 October 2017 | |
Si doping superlattice structure on 6H-SiC(0001)
1 School of Science, Xi ‘ an Polytechnic University, Xi ‘ an 710048, China
2 Department of Electronic Engineering, Xi’ an University of Technology, Xi’ an 710048, China
a Corresponding author: xpu_lilianbi@163.com
Si-DSL structures multilayers are prepared on 6H-SiC(0001) successfully. The energy offsets of the n-Si/n-6H-SiC heterojunction in the conduction band and valance band are 0.21eV and 1.65eV, respectively. TEM characterizations of the p/n-Si DSL confirms the epitaxial growth of the Si films with [1-11] preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. J-V measurements indicate that the heterostructure has apparent rectifying behavior. Under visible illumination with light intensity of 0.6W/cm2, the heterostructure demonstrates significant photoelectric response, and the photocurrent density is 2.1mA/cm2. Non-UV operation of the SiC-based photoelectric device is realized.
© The authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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