MATEC Web Conf.
Volume 130, 2017The International Conference on Composite Material, Polymer Science and Engineering (CMPSE2017)
|Number of page(s)||4|
|Section||Thin film and coating technology|
|Published online||25 October 2017|
Si doping superlattice structure on 6H-SiC(0001)
1 School of Science, Xi ‘ an Polytechnic University, Xi ‘ an 710048, China
2 Department of Electronic Engineering, Xi’ an University of Technology, Xi’ an 710048, China
a Corresponding author: email@example.com
Si-DSL structures multilayers are prepared on 6H-SiC(0001) successfully. The energy offsets of the n-Si/n-6H-SiC heterojunction in the conduction band and valance band are 0.21eV and 1.65eV, respectively. TEM characterizations of the p/n-Si DSL confirms the epitaxial growth of the Si films with [1-11] preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. J-V measurements indicate that the heterostructure has apparent rectifying behavior. Under visible illumination with light intensity of 0.6W/cm2, the heterostructure demonstrates significant photoelectric response, and the photocurrent density is 2.1mA/cm2. Non-UV operation of the SiC-based photoelectric device is realized.
© The authors, published by EDP Sciences, 2016
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