MATEC Web Conf.
Volume 77, 20162016 3rd International Conference on Mechanics and Mechatronics Research (ICMMR 2016)
|Number of page(s)||5|
|Section||Materials Analysis and Study|
|Published online||03 October 2016|
Si/SiC heterojunction optically controlled transistor with charge compensation layer
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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