MATEC Web Conf.
Volume 108, 20172017 International Conference on Mechanical, Aeronautical and Automotive Engineering (ICMAA 2017)
|Number of page(s)||5|
|Section||Modern Electronic Information Technology|
|Published online||31 May 2017|
Full 3D Simulation of the New Closed Shell-Electrode Detector
1 Engineering laboratory of Special Functional thin film Materials, School(Faculty) of Materials and Engineering, Xiangtan University, Xiangtan 411105, China
2 Center for semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105, China
A new structure of 3D detectors has been proposed. In order to separate it from the non-etch-through 3D-Trench electrode detectors, we call it as the Closed Shell-Electrode Detector (CSED, Chinese Patent #ZL201620361767.1). The detector concept of the CSED will be described in detail here. Full 3D simulations of the performance behavior of the CSED will be carried out and presented. These simulations include detector potential, electric field, and electron (or hole) concentration profiles, as well as detector leakage current, capacitance, and charge collection properties. Comprehensive comparisons between the CSED and the non-etch-through 3D-Trench electrode detectors will be made. The novel CSED has much better electric field profiles near the backside and are much better isolated from neighboring cells than that in non-etch-through 3D-Trench electrode detectors.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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