MATEC Web Conf.
Volume 78, 20162nd International Conference on Green Design and Manufacture 2016 (IConGDM 2016)
|Number of page(s)||8|
|Published online||07 October 2016|
Development of ZnO Infrared LED and Its Emissivity
Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Main Campus, Malaysia
* Corresponding author: email@example.com
This paper provides an investigation of the design and characterization of zinc oxide (ZnO) in infrared light emitting diode (LED) application. Zinc oxide has been proved as one of the material that consists of wide range of electrical and optical properties [1,2]. A structure of ZnO infrared LED with pn junction is designed using a simulated environment. Layer of p-type doping is located at the top center of the LED while layer of n-type doping is at the bottom. This infrared LED is developed for its capability to emit electromagnetic spectrum. In order to obtain expected outputs, some parameters of the material have to be configured precisely. As a result, a current-voltage relationship and internal quantum efficiency is obtained. Besides that, emission rate and total emission rate of the design also has been successfully investigated. Finally, the properties of ZnO infrared LED are summarized and concluded.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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