Emission Rate Variation and Efficiency Measurement in TiO₂ Light Emitting Diode

Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra, 02600 Arau, Perlis, Malaysia

^* Corresponding author: ctnursyamimi92@gmail.com

Abstract

Titanium dioxide light emitting diode was successfully designed and characterised. An approach in developing TiO₂ was based on cylindrically symmetric configuration with shorter computation time. The main goal of the research was to look into the performance of light emitting diode by using titanium dioxide and compare its validity with the standard or common criteria. The circular chip of titanium dioxide with 60 μm diameters was made with a circular active region formed by p and ntype dopants. The drastic reduction of internal quantum efficiency droops almost to zero value even though the current started to increase by 0.002 mA. The efficient operation within the device was observed that it would occur at the lowest current 0.01 mA while the total emission rate shown linearly increased at axis (0.002 mA, 5.6 (1/s)). This light emitting diode based on titanium dioxide also enabled to operate at lower turn-on voltage as low as 0.5 V. As the increment of voltages, the distribution of emission rate became less concentrated towards the top active of p-type layer of the device. The result also compared the two meshes where it was found that the refined mesh was focused around the p-n junction.