MATEC Web Conf.
Volume 78, 20162nd International Conference on Green Design and Manufacture 2016 (IConGDM 2016)
|Number of page(s)||7|
|Published online||07 October 2016|
ZnSe Light Emitting Diode Quantum Efficiency and Emission Characterization
Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Main Campus, Malaysia
* Corresponding author: email@example.com
ZnSe has demonstrated as a potential candidate in realizing advance LED in some appications for current and future works that utilize a cheaper preparation technique. Blue and white LEDs have been shown to spread across compound semiconductors. This II-VI compound semiconductor with a direct and wide band gap is used in the study which focused on a preparation and its characterization. The device is developed using a circular chip of ZnSe but only part of the active region is designed to allow shorter computation time. Analyses of the proposed LED are performed in an environment that allows optical transition and nonradiative recombination mechanisms. Voltage variation from 0 V to 1.5 V is maintained throughout the observation. The curent-voltage plot shows the p-n junction or diode behavior with central emissive layer. The two dimensions surface emission rate obtained indicates that voltage increment causes the emission concentration to become higher near the central pcontact. The LED efficiency is assessed in terms of internal quantum efficiency and emitting rate.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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