MATEC Web Conf.
Volume 67, 2016International Symposium on Materials Application and Engineering (SMAE 2016)
|Number of page(s)||9|
|Section||Chapter 6 Materials Science|
|Published online||29 July 2016|
Sequential Processes to Produce N-TiO2 Films Through Rf Plasmas
1 Instituto Nacional de Investigaciones Nucleares, Plasma Physics Laboratory, AP 18-1027, 11801, México, D.F., México
2 Instituto Tecnológico de Toluca, AP 890, Toluca, México
3 ESIME-Zacatenco-IPN, AP 07738, México, D.F., México
* Corresponding author: firstname.lastname@example.org
Using as target a CpTi disk in an atmosphere of argon/oxygen and by rf plasma. First titanium dioxide (TiO2) films were obtained on silicon substrates, and subsequently, these films were doped with nitrogen (N-TiO2). In both processes, along four hours at 390°C of temperature. X-Ray diffraction and Raman spectroscopy confirmed the presence of the nanostructured anatase phase. X-ray photoelectron spectroscopy analyzes indicate that the nitrogen atoms were incorporated into the TiO2 film with ~33.9 at%. The films reach a thickness of 1.25 μm and 40 nm the average uniformity determined by using an atomic force microscope. Finally, UV-Vis diffuse reflectance spectroscopy outcome evaluated ones an energy band gap reduction from 3.17 eV to 2.95 eV corresponding to TiO2 films and N-TiO2 films respectively.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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