MATEC Web of Conferences
Volume 8, 2013Progress in Ultrafast Laser Modifications of Materials
|Number of page(s)||2|
|Section||Femtosecond laser-induced modifications in various materials|
|Published online||18 November 2013|
Femtosecond Single-Pulse Absorption in Semiconductors with varying Dopant Concentration
Townes Laser Institute, CREOL, University of Central Florida, 4000 Central Florida Blvd. Bl. 53, Orlando, FL, 32816, USA
* e-mail: firstname.lastname@example.org
The influence of dopant concentration on the absorption of femtosecond mid-IR pulses is described. The measured results are compared to a theoretical absorption model.
© Owned by the authors, published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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