Open Access
Issue
MATEC Web Conf.
Volume 67, 2016
International Symposium on Materials Application and Engineering (SMAE 2016)
Article Number 06046
Number of page(s) 6
Section Chapter 6 Materials Science
DOI https://doi.org/10.1051/matecconf/20166706046
Published online 29 July 2016
  1. F. Tatsuki, N. Yoshiaki, S. Masakazu, et al, Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growth, Physica Status Solidi(a), 208 (2011) 1203–1205. [CrossRef] [Google Scholar]
  2. Zhao Yun, Wang Gang, Yang Huai-Chao, et al, Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst, Chinese Physics B, 23 (2014) 096802 [CrossRef] [Google Scholar]
  3. Liu Bao-Lin, Deng Biao, Li Xiao-Ying et al, Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers, Acta Physica Sinica, 59 (2010) 4996–5001. [Google Scholar]
  4. Yang Qi, Zhang Yu-Li, Ding Li-Zhen et al, Improved Photoluminescence in InGaN/GaN Strained Quantum Wells, Chinese Physics Letters, 31 (2014) 076101. [CrossRef] [Google Scholar]
  5. H. J. Chang, Y. P. Hsieh, T. T. Chen, et al, Strong luminescence from strain relaxed InGaN/GaN nanotips for highly efficient light emitters, Optics Express, 15 (2007) 9357–9365. [CrossRef] [Google Scholar]
  6. D. J. Kim, Y. T. Moon, K. M. Song, et al, Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells, Jpn. J. Appl. Phys., 40 (2001) 3085–3088. [CrossRef] [Google Scholar]
  7. D. J. Chen, B. Shen, K. X. Zhang, et al, Structural properties of GaN_(1-x)P_x films, Acta Phys. Sin., 52 (2003) 1788–1791(in Chinese). [Google Scholar]
  8. E. Arslan, M. K. Ozturk, H. Cakmak, et al, Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate, Journal of Materials Science: Materials in Electronics, 24 (2013) 4471–4481. [CrossRef] [Google Scholar]
  9. Y. J. Ke, H. W. Liang, R. S. Shen, et al, Effect of showerhead gap position on the growth of InGaN/GaN MQWs, Chinese Journal of Luminescence, 34 (2013) 469–473. [CrossRef] [Google Scholar]
  10. S. Ito, H. Kobayashi, K. Araki, et al, Resonant Raman and FTIR spectra of carbon doped GaN, Journal of Crystal Growth, 414 (2015) 56–61. [CrossRef] [Google Scholar]

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