| Issue |
MATEC Web Conf.
Volume 67, 2016
International Symposium on Materials Application and Engineering (SMAE 2016)
|
|
|---|---|---|
| Article Number | 06046 | |
| Number of page(s) | 6 | |
| Section | Chapter 6 Materials Science | |
| DOI | https://doi.org/10.1051/matecconf/20166706046 | |
| Published online | 29 July 2016 | |
Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs
School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, P. R. China
a lmliang117@163.com
b lmliang117@163.com
c xjxie@hebut.edu.cn
d clark@tju.edu.cn
e haoqiuyan@hebut.edu.cn
f ccliu@hebut.edu.cn
* Corresponding author: lmliang117@163.com
N-type InGaN/GaN multiple-quantum-wells (MQWs) were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The crystal quality and optical properties of samples after rapid thermal annealing (RTA) at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD) and photoluminescence (PL) spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.
Key words: InGaN/GaN MQWs / RTA / XRD / PL spectrum
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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