Open Access
Issue |
MATEC Web Conf.
Volume 67, 2016
International Symposium on Materials Application and Engineering (SMAE 2016)
|
|
---|---|---|
Article Number | 02002 | |
Number of page(s) | 6 | |
Section | Chapter 2 Electronic Technology | |
DOI | https://doi.org/10.1051/matecconf/20166702002 | |
Published online | 29 July 2016 |
- X. Dai, Q. Chang, Growth of 450mm CZ Si single crystal of IC grade, J. Mater. China, 10 (2010) 21–24. [Google Scholar]
- M. Watanabe, S. Kramer, 450 mm silicon: An opportunity and wafer scaling, J. Int. Electrochem. Soc., 4 (2006) 28–32. [Google Scholar]
- Z. Lu, S. Kimbel, Growth of 450mm diameter semiconductor grade silicon crystals, J. Cryst. Growth, 318 (2011) 193–195. [CrossRef] [Google Scholar]
- E. Kamiyama, J. Vanhellemont, K. Sueoka, Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection, Appl. Phys. Lett., 8 (2013) 082108. [CrossRef] [Google Scholar]
- L. Liu, K. Kakimoto, Effects of crystal rotation rate on the melt–crystal interface of a CZ-Si crystal growth in a transverse magnetic field, J. Cryst. Growth, 310 (2008) 306–312. [CrossRef] [Google Scholar]
- A. Noghabi, M. Jomâa, M. M’hamdi, Analysis of W-shape melt/crystal interface formation in Czochralski silicon crystal growth, J. Cryst. Growth, 362 (2013) 77–82. [CrossRef] [Google Scholar]
- W. T. Chung, Y. H. Wu, Y. C. Chen, Investigation of the 22 inch hot zone simulation and experiment of the CZ silicon crystal growth process, 37th IEEE Photovoltaic Specialists Conf. on latest technology in the field of Photovoltaics, Washington,USA, Jun 2011, paper 2142. [Google Scholar]
- D. P. Lukanin, V. V. Kalaev, Y. N. Makarov, Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth, J. Cryst. Growth, 266 (2004) 20–27. [CrossRef] [Google Scholar]
- X Y Zhang, X J Guan, Z B Pan, Simulation on effect of heat shield position on the V/G, point defects and thermal stress of Gzochralski silicon, Journal of Synthetic Crystals, 4 (2014) 771–777. [Google Scholar]
- X Y Zhang, X J Guan, J Wang, Simulation of Melt Flow and Interface Shape of 450 mm Czochralski Grown Silicon Single Crystal, in: Shyan-lung Chung, Xiao-long Li, The proceedings of CMSEE 2014, World Scientific Publishing Co. Pte. Ltd., Singapore, 2015, pp. 384–391. [Google Scholar]
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.