MATEC Web Conf.
Volume 67, 2016International Symposium on Materials Application and Engineering (SMAE 2016)
|Number of page(s)||6|
|Section||Chapter 2 Electronic Technology|
|Published online||29 July 2016|
Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates
1 School of Materials Science and Engineering, Shandong University, Jinan 250061, China
2 Institute of Crystal Materials Shandong University, Jinan 250100, China
* Corresponding author: firstname.lastname@example.org
For discovering the principle of processing parameter combination for the stable growth and better wafer quality of Φ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for Φ450 mm Cz silicon crystal growth are some different from that for Φ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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