EDP Sciences logo
Web of Conferences logo
Search
Menu
All issues Volume 40 (2016) MATEC Web of Conferences, 40 (2016) 01006 References
Open Access
Issue
MATEC Web of Conferences
Volume 40, 2016
2015 International Conference on Mechanical Engineering and Electrical Systems (ICMES 2015)
Article Number 01006
Number of page(s) 5
Section Material properties and processing technology
DOI https://doi.org/10.1051/matecconf/20164001006
Published online 29 January 2016
  1. Chow T P. High-voltage SiC and GaN power devices[J]. Microelectronic Engineering, 2006, 83(1): 112–122. [CrossRef] [Google Scholar]
  2. TanakaY, OkamotoM, AkatsukaA, et al. 700 V 1.0 mΩ.cm2 Buried Gate SiC-SIT (SiC-BGSIT)[J]. IEEE Electron Device Letters, 2006, 27(11): 908–910. [CrossRef] [Google Scholar]
  3. Mike C. Heterostructuring for high speed, power and light [J]. Semiconductor Today, 2009, 4(2): 73–78. [Google Scholar]
  4. Yanagihara M, Uemoto A, Ueda T, et al. Recent advances in GaN transistors for future emerging applications[J]. Phys Status Solidi A, 2009, 206(6):1221–1227. [CrossRef] [Google Scholar]
  5. Wong King-yuen, Chen Wan-Jun, Chen Kevin J. Integrated voltage reference and comparator circuits for GaN smart power chip technology[C] //Proceedings of the 21th International Symposium on Power Semiconductor Devices & IC’s. Barcelona, Catalonia: IEEE, 2009: 57–60. [Google Scholar]
  6. Chen Wan-jun, Wong King-yuen, Chen K J. Single-chip boost converter using monolithically integrated AlGaN/GaN lateral field-effect rectifier and normally-off HEMT[J]. IEEE Electron Device Letters, 2009, 30(5):430–432 [CrossRef] [Google Scholar]
  7. Chen Wan-jun, Wong King-yuen, Huang Wei, et al. High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors [J]. Appl Phys Lett, 2008, 92(25): 253501. [CrossRef] [Google Scholar]
  8. Zhang Bo, Deng Xiao-chuan, Zhang You-run, et al. Recent development and future perspective of silicon carbide power devices—opportunity and challenge[J]. Journal of China Academy of Electronics and Information Technology, 2009, 4(2): 111–118. [Google Scholar]
  9. Uemoto Y, Hikita M, Ueno H, et al. Gate injection transistor(GIT)—A normally-off AlGaN/GaN power transistor using conductivity modulation[J]. IEEE Trans.Electron Devices, 2007, 54(12): 3393–3399. [Google Scholar]
  10. Huang W, Li Z; Chow T P, et al. Enhancement-mode GaN Hybrid MOS-HEMTs with Ron,sp of 20 mΩ.cm 2 [C]. Proceedings of the 20 International Symposium on Power Semiconductor Devices & IC’s. Orlando, FL: IEEE,2008: 295–298. [Google Scholar]
  11. Schmelzer D, Long S I. A GaN HEMT class F amplifier at 2GHz with >80% PAE [J]. IEEE Journal of Solid-State Circuits,2007,42(10):2130–2136 [CrossRef] [Google Scholar]
  12. Ramadan A, Reveyrand T,Martin A, et al. Experimental study on effect of second harmonic injection at input of classes F and F-1 GaN power amplifiers [J].Electronics Letters,2010,46(8):570–572. [CrossRef] [Google Scholar]
  13. Mark Rosker, Christopher Bozada, Dietrich Harry, et al. The DARPA Wide Band Gap Semiconductors for RF Applications (WBGS-RF) Program: Phase II Results [C]. CS MANTECH Conference, 2009. [Google Scholar]
  14. Mark Rosker J., Albrecht John D., Cohen E., et al. DARPA’s GaN technology thrust [C]. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 2010:1214–1217. [CrossRef] [Google Scholar]
  15. Joe X. Qiu, A. M. Darwish, E. A. Viveiros, et al. Linearity characteristics study of millimeter-wave GaN power amplifier [C]. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 2011, 1–4, [Google Scholar]
  16. Raymond S. Pengelly and Carl W. Janke. 1 to 2 GHz, 50 Watt Push-Pull Power Amplifier Using SiC MESFETs[J]. 2006 High Frequency Electronics. June 2006 [Google Scholar]
  17. Klimm D.Electronic materials with a wide band gap: recent developments[J]. IUCrJ. 2014, 9: 281–290. [CrossRef] [Google Scholar]
  18. Fabrizio Roccaforte, Patrick Fiorenza, Giuseppe Greco, et al. Challenges for energy efficient wide band gap semiconductor power devices[J], physica status solidi, 2014, 211(9): 2063–2071, [CrossRef] [Google Scholar]
  19. A. Hefner. Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices[J]. GOMACTech 2006:232–235. [Google Scholar]
  20. Rosker M.J. Technologies for Next Generation T/R Modules [J].IEEE Radar Conference,2007:944–947 [Google Scholar]

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.