| Issue |
MATEC Web of Conferences
Volume 40, 2016
2015 International Conference on Mechanical Engineering and Electrical Systems (ICMES 2015)
|
|
|---|---|---|
| Article Number | 01006 | |
| Number of page(s) | 5 | |
| Section | Material properties and processing technology | |
| DOI | https://doi.org/10.1051/matecconf/20164001006 | |
| Published online | 29 January 2016 | |
Review of wide band-gap semiconductors technology
Library, China Defence Science and Technology Information Center, China
Silicon carbide (SiC) and gallium nitride (GaN) are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si) or gallium arsenide (GaAs), wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.
© Owned by the authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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