| Issue |
MATEC Web Conf.
Volume 201, 2018
2017 The 3rd International Conference on Inventions (ICI 2017)
|
|
|---|---|---|
| Article Number | 02009 | |
| Number of page(s) | 3 | |
| Section | Invention of electrical engineering system | |
| DOI | https://doi.org/10.1051/matecconf/201820102009 | |
| Published online | 14 September 2018 | |
Comparison of bulk FinFET and SOI FinFET
1
National United University, Department of Electronic Engineering, 36063 Miaoli, Taiwan
*
National United University, Department of Electronic Engineering, 36063 Miaoli, Taiwan
* Corresponding author: yhlin@nuu.edu.tw
In this study, we compare the differences and advantages between Bulk FinFET and SOI FinFET. The results are simulated by using the ISE TCAD software. By changing the parameters of the gate voltage, drain voltage and gate length to analysis which characteristic is better. Through the experiment results, we demonstrate that the SOI FinFET have the better characteristics than bulk FinFET[1].
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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