MATEC Web Conf.
Volume 71, 2016The International Conference on Computing and Precision Engineering (ICCPE 2015)
|Number of page(s)||4|
|Section||Control and Automation Technology, Mechatronics, Robotics for Manufacture and Industry|
|Published online||02 August 2016|
Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
1 Minghsin Universuty of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan
2 Treasure Giant Technology Inc., 3F-1, 42, Lyushuei Rd., Hsinchu City, 30068 Taiwan
3 Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 710, Taiwan
4 National Nano Device Laboratories, Hsinchu City, 30068 Taiwan
5 Taiwan Semiconductor Manufacturing Company Limited, Hsinchu City, 30068 Taiwan
6 United Microelectronics Corporation, Hsinchu City, 30068 Taiwan
a Corresponding author: email@example.com
The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future.
© The Authors, published by EDP Sciences, 2016
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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