MATEC Web Conf.
Volume 143, 2018IV International Young Researchers Conference “Youth, Science, Solutions: Ideas and Prospects” (YSSIP-2017)
|Number of page(s)||5|
|Published online||08 January 2018|
Obtaining memristor elements based on non-noble materials
Tomsk State University of Control Systems and Radioelectronics, 634003 Tomsk, Russia
* Corresponding author: Zhidikyur@mail.ru
This study is aimed at creating memristor elements based on TiO2/TiOx layers with electrodes that do not contain noble and rare-earth metals, by vacuum deposition method. The characteristics of these elements analyzed by voltammetric methods show that the appearance of an N-type region of negative differential resistance on the current–voltage curve can be caused only by metal electrodes whose vacuum work function exceeds that of TiO2. The appearance of the N-type region on the current–voltage curve of a memristor element is possible only after electrically assisted vacuum forming. Mo–TiO2/TiOx–Ni/Cu structures, for which the ILR/IHR ratio reaches two orders of magnitude at a voltage of less than 4 V, have the most stable parameters.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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