MATEC Web Conf.
Volume 143, 2018IV International Young Researchers Conference “Youth, Science, Solutions: Ideas and Prospects” (YSSIP-2017)
|Number of page(s)||6|
|Published online||08 January 2018|
Investigation of temperature stability of ITO films characteristics
Tomsk State University of Control Systems and Radioelectronics, 634003 Tomsk, Russia
* Corresponding author: Zhidikyur@mail.ru
The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100°C without deterioration of their parameters.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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