Design of a full 1Mb STT-MRAM based on advanced FDSOI technology

Univ. Grenoble Alpes, INAC-SPINTEC; CNRS; CEA, 17 rue des Martyrs, Grenoble, France

^* Corresponding author: kotb.jabeur@cea.fr
guillaume.prenat@cea.fr

Abstract

In one hand, the shrinking of CMOS technology nodes is dramatically increasing the leakage current in integrated circuits. In the other hand, modern portable devices first concern is power-efficiency to insure a better autonomy. Thus, new device technologies and computing strategies are required in integrated systems to save power without limiting processing performances. The use of Non-Volatile Memories (NVM) seems to be a choice of a great interest in complex computing systems. But, their integration within heterogeneous technologies remains a real challenge. Among emerging NV memories, Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) is considered as one of the most attractive candidates to overcome shortcomings of conventional memories. In this paper, we describe the design of a fully embedded STT-MRAM. We developed and validated a complete MRAM platform to simulate and evaluate a 1Mb STT-MRAM based on 28nm FDSOI technology. Furthermore, we exploited body back biasing techniques offered by the FDSOI technology to achieve 60% of decrease in term of leakage power and give the possibility to increase performance up to 2x.