MATEC Web Conf.
Volume 125, 201721st International Conference on Circuits, Systems, Communications and Computers (CSCC 2017)
|Number of page(s)||5|
|Published online||04 October 2017|
X-band Core Chip SiGe design for Phased Array T/R Modules
1 University of Electronic Technology, 124498 Moscow, Russia
2 Izhevsky radiozavod, Production Department, 426034 Izhevsk, Russia
* Corresponding author: firstname.lastname@example.org
The structure of the Core Chip for Phased Array T R Modules is presented. Methods for the formation of a phase delay for X phase shifters are considered. An original differential design of SiGe core chip for X-band is presented. The schematic of 5 bits phase shifter and attenuator are designed. It consist of a series number LPF and HPF filters. Gain of phase shifter is 1.5 dB. Attenuator has the adjustment range from 0 to 24dB. Linear output power of the core chip is 5dBm. The total consumed current of the device is 158mA, at 5V power supply.
© The Authors, published by EDP Sciences, 2017
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