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Cited article:

Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate

Jing Zhou, Hongjun Chen, Yang Wang, Xingming Long

MATEC Web Conf., 327 (2020) 02003

Published online: 2020-11-06

DOI: https://doi.org/10.1051/matecconf/202032702003

This article has been cited by the following article(s):

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

Bang-zhi Xiao, Yin-shui He and Wen-bo Xiao
AIP Advances 15 (4) (2025)
https://doi.org/10.1063/5.0250125