| Issue |
MATEC Web Conf.
Volume 327, 2020
2020 4th International Conference on Measurement Instrumentation and Electronics (ICMIE 2020)
|
|
|---|---|---|
| Article Number | 02003 | |
| Number of page(s) | 5 | |
| Section | Electronic Materials and Characteristics Analysis | |
| DOI | https://doi.org/10.1051/matecconf/202032702003 | |
| Published online | 06 November 2020 | |
Simulation of Electrical Characteristics on Inhomogeneous Strains in Normally-off HEMTs with p-GaN Gate
1 Full State Key Lab of Power Transmission Equipment and System Security & New Technology, Chongqing University, Chongqing 400047 China
2 Department of Physics, Chongqing Normal University, Chongqing 401331 China
* Corresponding author: jeanne_z@cqu.edu.cn
Strain is one of the important factors affecting the two-dimensional electron gas (2DEG) transform in AlGaN/GaN material based high electron mobility transistors (HEMTs) by polarization effects. In this paper, the effects of inhomogeneous biaxial strain in different regions of the AlGaN barrier layer on electrical properties of normally-off HEMTs with p-GaN gate were discussed. The results show that biaxial strain applied in three regions has different influence on transfer, output and breakdown characteristics of the device. The strain applied in region under gate has the most significant impact on threshold voltage and drain saturation current with a decreasing of 39% and an increasing of 97% respectively as the strained lattice constant increases from 3.173061Å to 3.187229Å.While, strain applied between gate and drain electrode can improve the off-state breakdown voltage by 12% with the increasing of strained lattice constant.
© The Authors, published by EDP Sciences, 2020
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