Open Access
Issue
MATEC Web Conf.
Volume 139, 2017
2017 3rd International Conference on Mechanical, Electronic and Information Technology Engineering (ICMITE 2017)
Article Number 00056
Number of page(s) 4
DOI https://doi.org/10.1051/matecconf/201713900056
Published online 05 December 2017
  1. Gilmore R, Besser L. Practical RF circuit design for modern wireless systems[M]. Artech House, (2003). [Google Scholar]
  2. Paidi V, Xie S, Coffie R, et al. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology[J]. Microwave Theory and Techniques, IEEE Transactions on, (2003), 51(2): 643–652. [CrossRef] [Google Scholar]
  3. Medrel P, Ramadan A, Nebus J M, et al. High efficiency class B GaN power amplifier with dynamic gate biasing for improved linearity[J]. Electronics letters, (2012),48(18): 1136–1137. [CrossRef] [Google Scholar]
  4. Khan M A, Kalim D, Negra R. Analysis and design of an unconditionally stable common-drain class-B RF power amplifier in 90 nm CMOS technology[C] //Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), Workshop on. IEEE, 1–4,(2011). [Google Scholar]
  5. Birafane A and Kouki A B. On the linearity and efficiency of out phasing microwave amplifiers[J]. IEEE Transactions on Microwave Theory and Techniques, (2004), 52(7):1702–1708. [CrossRef] [Google Scholar]
  6. Cohn M, Degenford J E, Freitag R G. Class B operation of microwave FETs for array module applications[C]// MTT-S International Microwave Symposium Digest. Dallas Texas: IEEE, (1982). [Google Scholar]
  7. Shervin M, Abidi A A. The Outphasing RF Power Amplifier: A Comprehensive Analysis and a class-B CMOS Realization[J]. IEEE Journal of Solid-State Circuits, (2013), 48(6):1357–1369. [CrossRef] [Google Scholar]
  8. Jiang Xin, Martin A L, Mortazawi A. A class-B push-pull power amplifier based on an extended resonance technique[J]. IEEE Microwave and Wireless Components Letters, (2003), 13(12):550–552. [CrossRef] [Google Scholar]
  9. Lane J R, Freitag R G, Degenford J E, Cohn M. High Efficiency One, Two, and Four Watt Class B FET PowerAmplifiers[C]// MTT-S International Microwave Symposium Digest. Baltimore, USA: IEEE, (1986). [Google Scholar]
  10. Asbeck P, Fallesen C. A 29 dBm 1.9 GHz class B power amplifier in a digital CMOS process[C]// ICECS 7th International Conference on Electronics, Circuits and Systems. Jounieh, Lebanon: IEEE (2000). [Google Scholar]
  11. Eccleston K W, Kyaw O. Analysis and design of class-B dual fed distributed power amplifiers[J]. IEEE Proceedings – Microwaves, Antennas and Propagation, (2004),151(2): 104–108. [CrossRef] [Google Scholar]
  12. Tyson S W, Lawrence E L. A 1 Watt 1-5 GHz Class B push-pull Si/SiGe HBT power amplifier[C]// Custom Integrated Circuits Conference. San Jose, California.: IEEE,(2009). [Google Scholar]
  13. Mimis K, Bensmida S, Morris K A, McGeehan J P. Continuous harmonically tuned class-B power amplifier: Aclosed form equation design approach[C]// MTT-S International Microwave Symposium Digest, Montreal, Quebec, Canada: IEEE, (2012). [Google Scholar]

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