Open Access
MATEC Web Conf.
Volume 67, 2016
International Symposium on Materials Application and Engineering (SMAE 2016)
Article Number 02019
Number of page(s) 6
Section Chapter 2 Electronic Technology
Published online 29 July 2016
  1. C.I. Wu, A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces, Applied Surface Science, 162–163, (2000) 250–255. [CrossRef] [Google Scholar]
  2. M. P. Ulmer, W. B. Wessels, F. Shahedipour, R. Y. Korotkov, C. Joseph, and T. Nihashi. Progress in the fabrication of GaN photo-cathodes. Proceedings of SPIE, 2001, Vol. 4288, 246–253. [CrossRef] [Google Scholar]
  3. M. P. Ulmer, B. W. Wessels, and O. H. W. Siegmund, Advances in wide-band gap semi-conductor based photocathode devices for low light level applications, Proc. of SPIE, 2002, 4650, 94–103. [CrossRef] [Google Scholar]
  4. O.H.W. Siegmund, A. S. Tremsin, J. V. Vallerga, J. B. McPhate, J. S. Hull, J. Malloy and A. M. Dabiran, Gallium nitride photocathode development for imaging detectors, Proc. of SPIE, 2008, 7021, 70211B. [CrossRef] [Google Scholar]
  5. O. Siegmund, J. Vallerga, J. McPhate, J. Malloy, A. Tremsin, A. Martin, M. Ulmer, B. Wessels. Development of GaN photocathodes for UV detectors. Nuclear Instruments and Methods in Physics Research A, 2006, 567, 89–92. [CrossRef] [Google Scholar]
  6. F Machuca, Z Liu, Y Sun, et al. Role of oxygen in semiconductor negative electron affinity photocathodes. J. Vac. Sci. Technol.B. 2003, Vol. 20, No. 6, 2721–2725. [CrossRef] [Google Scholar]
  7. F Machuca, Z Liu, Y Sun, et al. Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes. J. Vac. Sci. Technol. 2003, 21(4), 1863–1869. [CrossRef] [Google Scholar]
  8. Zou Ji-Jun, Chang Ben-Kang, Yang Zhi. Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. ACTA PHYSICA SINICA. 2007, 56(5): 2992–2997. [Google Scholar]
  9. Li Biao, Prepration and evaluation of reflection-mode gradient-doping GaN photocathode[D], Nanjing University of Science & Technology, 2013, 35–40. [Google Scholar]
  10. Qiao Jianliang, Chang Benkang, Qian Yunsheng, Wang Xiaohui, Li Biao, Fu. Xiaoqian “Study on photoemission mechanism for negative electron affinity GaN vacuum electron source”, Physica Status Solidi c, 2012, 09(01), 36–40. [CrossRef] [Google Scholar]
  11. Wang Xiao-Hui, Shi Feng, Guo Hui, Hu Cang-Lu, Cheng Hong-Chang, Chang Ben-Kang, Ren Ling, Du Yu-Jie, Zhang Jun-Ju. “The optimal thickness of a transmission-mode GaN photocathode”, Chinese Physics B, 2012, 21(8), 087901. [CrossRef] [Google Scholar]
  12. F. Machuca A thin film p-type GaN photocathode: prospect for a high performance electron emitter[D], Stanford University, 2003. [Google Scholar]
  13. Zhi Yang, Benkang Chang, and Jijun Zou. Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode. Applied Optics, 2007, 46(28): 7035–7039. [CrossRef] [Google Scholar]
  14. Niu Jun, Zhang Yijun, Benkang Chang, et al. Influence of varied doping structure on photoemissive property of photocathode. Chinese Physics B, 2011, 20(4): 044209. [CrossRef] [Google Scholar]
  15. Wang Xiao-Hui, Photoemission performance of wurtzite structure GaN (0001) surface [D], Nanjing University of Science & Technology, 2013, 76. [Google Scholar]

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