Research progress on Sb-rich nanostructured films for phase-change memory

Materials Science and Engineering, Shanghai Institute of Technology, 201418 Shanghai, China

^* Corresponding author: 2310140118@mail.sit.edu.cn

Abstract

In the era of big data, the demand for data storage is increasing. Researchers are currently seeking to develop a non-volatile, high-speed, highly reliable, and low-energy storage medium. Phase change memory is a effective memory of them. This paper focuses on exploring different characteristics of thin films such as Ge₂Sb₂Te₅, Sb₂Te, Ge₂Sb₂Te₅/ZnSb (GST/ZS) stacked thin films, Ru-doped Sb₂Te, and MnTe/GeTe stacked thin films to analyze which stacked thin film for phase change memory can meet the requirements for high speed and thermal stability. Single-matter materials can improve stability to data and material loss by combining with Sb groups or stacking with their related materials to form new phase change materials. By controlling the temperature and resistance of Ge₂Sb₂Te₅ film can have a better selection of optimization; Sb₂Te film doped with C to get a higher improvement in the nature of the film, but the lack of stability; after stacking the two to better solve this problem.