| Issue |
MATEC Web Conf.
Volume 386, 2023
2023 International Conference on Materials Engineering, New Energy and Chemistry (MENEC 2023)
|
|
|---|---|---|
| Article Number | 02004 | |
| Number of page(s) | 6 | |
| Section | Power Electronics and Renewable Energy | |
| DOI | https://doi.org/10.1051/matecconf/202338602004 | |
| Published online | 01 November 2023 | |
The influence and application of SiC MOSFET driver modules in the contemporary power electronics industry
1 Institute of Electrical and Automation, Hefei University of Technology, Hefei, Anhui, 230009, China
2 Institute of Artificial Intelligence and Electrical Engineering, Guizhou Institute of Technology, Guiyang, Guizhou, 550003, China
3 Institute of Computer and Control Engineering, Northeast Forestry University, Harbin, Heilongjiang, 150036, China
* Corresponding author: wu2010162096@outlook.com
Technological progress has driven the rapid development of power electronics and enhanced the scale of the industry. SiC MOSFET devices have obvious advantages in applications such as high temperature resistance, high voltage resistance, and low switching loss. However, the different characteristics of such devices will bring related problems that seriously affect the reliability of the device and system. The drive circuit is effective in solving these problems with its small input resistance, parasitic inductance, and large enough drive voltage and current. Starting from the concept and related theoretical composition of SiC MOSFET driver module, this paper mainly analyses the impact of the driver module on the contemporary power electronics industry, and explains the application of the core research theory of the circuit to the industrial level. This paper also analyses the current situation of power electronics industry from the perspective of innovation theory, and looks forward to the prospect of power semiconductor devices.
© The Authors, published by EDP Sciences, 2023
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