MATEC Web Conf.
Volume 374, 2023International Conference on Applied Research and Engineering (ICARAE2022)
|Number of page(s)||15|
|Published online||05 January 2023|
Tungsten oxide thin film for room temperature nitrogen dioxide gas sensing
1 Department of Physics and Engineering: University of Zululand Private Bag X1001 KwaDlangezwa 3886, South Africa.
2 Laboratoire de Photonique, d’Energie et de Nanofabrication, Faculté des Sciences et Techniques, Université Cheikh Anta Diop de Dakar (UCAD) B.P. 5005 Dakar-Fann Dakar, Senegal.
Tungsten oxide (WO3) thin films for gas sensing have been successfully deposited using reactive direct current (DC) magnetron sputtering at different deposition temperatures (300 °C, 400 °C and 500 °C). The structural, morphological properties, thickness and composition have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford backscattering spectrometry (RBS) techniques. To investigate the effect of deposition temperature on the gas sensing properties of deposited thin films on alumina substrates, was conducted using the Kenosistec gas sensing unit. WO3 thin film deposited at 500 °C exhibited a higher response when sensing Nitrogen dioxide (NO2) at room temperature as compared to the thin films prepared at 300 °C and 400 °C, respectively. However, as deposited WO3 thin films exhibited low sensitivity when sensing reducing gases such as hydrogen (H2) and ammonia (NH3), which was an indication of good selectivity properties of WO3 related sensors.
Key words: Tungsten Oxide / DC Reactive Sputtering / Thin Films / Nitrogen Dioxide / Gas Sensing
© The Authors, published by EDP Sciences, 2023
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