c-Si PV cells emissivity characterization at low operating temperatures for efficiency management

¹ Faculty of Engineering, University of the Basque Country UPV/EHU, Plaza Ingeniero Torres Quevedo,1. Bilbao, 48013, Spain.
² Applied Physics II, University of the Basque Country UPV/EHU, Leioa, 48940, Spain.
³ Condensed Matter Physics, University of the Basque Country UPV/EHU, Leioa, 48940, Spain.

^* Corresponding author: raquel.fuente@ehu.eus

Abstract

Efficiency is a critical parameter for a solar cell to be successful and is closely related to the working temperature of the cell. In turn, the temperature can be related to the infrared emissivity, the parameter that governs the thermal radiative properties of a body. In particular, the importance of infrared emissivity in a solar cell is essential in passive cooling applications, where controlled radiative thermal losses could let the cell operate at lower temperatures, the range where they present higher efficiency. In this presentation, the emissivity of c-Si solar cells in the low temperature range (around 50 ºC) is discussed. Traditionally, it has been determined by indirect reflectivity measurements at ambient temperature and extrapolated to working temperatures, but here, a direct measurement is proposed. For an accurate value the measurements are performed in the high accuracy radiometer of the University of the Basque Country, which allows spectral directional emissivity measurements as a function of temperature.