High accuracy infrared emissivity between 50 and 1000 ᵒC for solar materials characterization

¹ Faculty of Engineering, University of the Basque Country UPV/EHU, Plaza Ingeniero Torres Quevedo, 1. Bilbao, 48013, Spain.
² Applied Physics II, University of the Basque Country UPV/EHU, Leioa, 48940, Spain.
³ Condensed Matter Physics, University of the Basque Country UPV/EHU, Leioa, 48940, Spain.

^* Corresponding author: raquel.fuente@ehu.eus

Abstract

The total hemispherical emissivity of materials used in the solar energy industry is a critical parameter in the calculation of the radiative thermal losses and material efficiency, especially in solar thermal collector absorbing surfaces. This is because the radiative heat losses have a significant economic impact on the final cost of the electricity produced in solar plants. Our laboratory, HAIRL, in the University of the Basque Country (UPV/EHU) in Spain [1] is the first to have published infrared spectral emissivity measurements in Solar Absorber Surfaces (SAS) at working temperature [2]. The laboratory allows measuring between 50 and 1000 ºC in the 0.83-25 μm range and is also capable of doing directional measurements at different angles between 0 and 80 degrees. Therefore, it is suitable for measuring solar selective coatings, for studying high temperature stability and for characterizing thermal energy harvesting materials. In this presentation, we show the specifications of our laboratory, the results of spectral emissivity measurements in air-resistant solar selective coatings and in eutectic alloys for thermal storage and we demonstrate the necessity of measuring at working temperature in order to possess reliable data.