Integrated technologies and the problem of creation of large-area silicone carbide devices for high-power converters

¹ Admiral Makarov State University of Maritime and Island Sipping, 198035, St-Petersburg, Russia
² Ioffe Physical Technical Institute, 194021, St-Petersburg, Russia

^* Corresponding author: eugeny.panyutin@mail.ioffe.ru

Abstract

We consider limitations typical for semiconductor devices of up-to-date converter equipment based on silicon and silicone technologies. The reasons for processing complexities in creating the hardware components of heavy-current devices based on wide-band-gap semiconductors are analyzed. Possible approach to production of large area SiC-diodes and thyristors is formulated, which at post-processing stage allows performing modification of their voltage-current characteristics (VCC) and increasing in its non-linearity coefficient. Based on the concept of integrated power devices containing mesa-elements with VCC with random parameters, the possibility of sequential automated exclusion of those single “non-standard” micro-devices to adversely impact on general voltage-current characteristics of an array is considered. Algorithm is briefly described, and computer modelling of transformation of the reverse branch of integrated VCC occurring in the course of such modification is provided, which made it possible to establish relationship between the typical probability distributions of impurity (including in the presence of dislocations) and certain features of final VCC.