Proximity Effect Aware Detailed Placement in Electron Beam Lithography

¹ College of Mathematics and Computer Science, Fuzhou University, Fuzhou 350108, China
² Center for Discrete Mathematics and Theoretical Computer Science, Fuzhou University, Fuzhou 350108, China
³ Fujian Key Laboratory of Information Processing and Intelligent Control, Minjiang University, Fuzhou 350108, China

^a Corresponding author: jlchen@fzu.edu.cn N160320054@fzu.edu.cn; N155420004@fzu.edu.cn; chenxf2000126@126.com; wxzhu@fzu.edu.cn;

Abstract

Proximity effect is one of the most tremendous consequences that produces unacceptable exposures during electron beam lithography (EBL), and thus distorting the layout pattern. In this paper, we propose the first work which considers the proximity effect during layout stage. We first give an accurate evaluation scheme to estimate the proximity effect by fast Gauss transform. Then, we devote a proximity effect aware detailed placement objective function to simultaneously consider wirelength, density and proximity effect. Furthermore, cell swapping and cell matching based methods are used to optimize the objective function such that there is no overlap among cells. Compared with a state-of-the-art work, experimental result shows that our algorithm can efficiently reduce the proximity variations and maintain high wirelength quality at a reasonable runtime.