Local Quasioptical Resonator Diagnostics of Semiconductor Wafers

National Research Tomsk State University, 634050, Tomsk, Russia

^a Corresponding author: idorofeev@mail.tsu.ru

Abstract

The method of measurement of reflection coefficient behind an orifice in one of reflectors of the quasioptical open resonator is considered. According to the applied mathematical model, the method has the restriction which is consist in use of a short-wave approximation for the orifice size (it dimension is much more than a wavelength). For evaluation of limits of applicability of this method the experimental setup in the threecentimetric range of wavelengths consist of the quasioptical open resonator and the system of positioning of the measuring probe is created. By the experimental study of distribution of fields behind an orifice in the reflector of the open resonator it is found that the method, except restriction of mathematical model, has also restrictions, due to the wave’s interference, reflected from edges of this orifice. It causes a deviation from the uniform amplitude distribution of the field in an opening that can lead to increase in an error of a reflection coefficient measuring. It is also shown that by decrease of the sizes of an orifice formation of a bunch with small divergence, but with significantly more expressed distribution of the field localized about a bunch axis in an aperture is possible. It can be used for diagnostics of inhomogeneity of samples with higher locality.