MATEC Web Conf.
Volume 142, 2018International Conference on Materials Applications and Engineering 2017 (ICMAE2017)
|Number of page(s)||6|
|Section||Chemical Materials and Chemical Syntheses|
|Published online||08 January 2018|
Preparation and Performance of Gallium Nitride Powders with Preferred Orientation
School of Physics and Electronic Engineering, Zhengzhou University of Light Industry, Zhengzhou City, Henan province, PR China, 450002
* Corresponding author: firstname.lastname@example.org, email@example.com
The paper prepared the III-V semiconductor, hexagonal wurtzite Gallium nitride powders by calcining a gallium oxide in flowing ammonia above 900 °C (1173K). Because of the solid-state reaction process that the gallium oxide transformed to GaN through solid-state gallium oxynitrides (GaOxNy) as inter-mediates, the Gallium nitride powders which are agglomerates of tens nanometers flake crystallites retain the rod shape and grain size of raw gallium oxide and have slight (002) plane preferred orientation. The near-edge emission of Gallium nitride at 346 nm has a blue shift of 187 meV attributed to a decrease in disorder of the material that is decided by the (002) plane preferred orientation. The preferred orientation and a blue shift have some kind of reference significance to single crystal growth.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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