MATEC Web Conf.
Volume 128, 20172017 International Conference on Electronic Information Technology and Computer Engineering (EITCE 2017)
|Number of page(s)||4|
|Published online||25 October 2017|
Resistance requirements of threshold switching selectors in 1S1R crossbar array
College of Electronic Science, National University of Defense Technology (NUDT), Changsha 410073, China
a Corresponding author: email@example.com
Leakage current suppression ability of threshold switching selectors is important for the high-density crossbar array of resistive random access memory (RRAM). Nevertheless, incompatibility of selector with paired RRAM element will lead to serious problems during operation. This paper investigates the ON-/OFF- resistance requirements of threshold switching selectors with simulation in 1Mb array. Results show that OFF-resistance needs to be higher than certain value while ON-resistance needs to be lower than some value to make sure successful operation. In addition, it presents the method determining the appropriate resistance range in detail. It aims at proposing guideline for fabricating and choosing adequate threshold switching selectors before integrating with RRAM element economically.
© The authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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