MATEC Web Conf.
Volume 104, 20172017 2nd International Conference on Mechanical, Manufacturing, Modeling and Mechatronics (IC4M 2017) – 2017 2nd International Conference on Design, Engineering and Science (ICDES 2017)
|Number of page(s)||6|
|Section||Chapter 1: Mechanical and Manufacturing Engineering|
|Published online||14 April 2017|
Passivation of HfO2/Ge interface with YON fabricated by different approaches
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
a Corresponding author: email@example.com
Nitrided Y2O3 (YON) interfacial passivation layer (IPL) is used to passivate the HfO2/Ge interface for better interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor. Two different approaches were used to prepare the YON IPL, one is to deposit YON directly by sputtering Y2O3 target in Ar+N2 ambient, and the other is to deposit YN first by sputtering Y target in Ar+N2 ambient followed by the annealing in N2+O2 to convert YN to YON. Experimental results indicate that the MOS capacitor fabricated by the latter approach could achieve more excellent interfacial and electrical properties due to more effective suppression of the formation of Ge oxides.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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