Additive effects under the series of EOS in space application VLSI circuits

National Research Nuclear University MEPhI, 115409 Moscow, Russia

^* Corresponding author: nsdyat@spels.ru

Abstract

One of the problems of space technology is the spacecraft on orbit charging effect. Series of EOS (electrical overstress) are caused by internal charging affect VLSI (very large-scale integrated) circuits, which may lead to its damage. The results of the EOS series with energy below the threshold of failure for modern submicron VLSI circuits design are presented. The obtained results confirm the possibility of accumulation of the effects of damage from exposure of EOS series in modern VLSI circuits and allow you to get the dependence describing the additive nature of damage the VLSI circuits during exposure to subthreshold EOS. The obtained dependence agrees well with the Arrhenius equation, which indicates the thermal nature of the damage under the series of subthreshold energy EOS. The method of the VLSI circuits testing is proposed to determine the level of the VLSI circuits EOS hardness to the effects of multiple different pulsing voltages.