| Issue |
MATEC Web Conf.
Volume 95, 2017
2016 the 3rd International Conference on Mechatronics and Mechanical Engineering (ICMME 2016)
|
|
|---|---|---|
| Article Number | 01005 | |
| Number of page(s) | 4 | |
| Section | Materials Handling Methods and Performance Analysis | |
| DOI | https://doi.org/10.1051/matecconf/20179501005 | |
| Published online | 09 February 2017 | |
The Effect of Growth Temperature and V/III Flux Ratio of MOCVD Antimony Based Semiconductors on Growth Rate and Surface Morphology
1 Physics Department, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Jl. Ir. Sutami No, 36A Surakarta, Indonesia
2 Chemistry Department, Faculty of Mathematics and Natural Sciences, Sebelas Maret University, Jl. Ir. Sutami No, 36A Surakarta, Indonesia
3 Physics Department, Macquarie University, Sydney NSW 2109, Australia
Epitaxial Alx Ga1-x Sb layers on GaSb and GaAs substrates have been grown by atmospheric pressure metalorganic chemical vapor deposition using TMAl, TMGa and TMSb. Nomarski microscope and a profiler were employed to examine the surface morphology and growth rate of the samples. We report the effect of growth temperature and V/III flux ratio on growth rate and surface morphology. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. A growth rate activation energy of 0.73 eV was found. At low growth temperatures between 520 and 540°C, the surface morphology is poor due to antimonide precipitates associated with incomplete decomposition of the TMSb. For layers grown on GaAs at 580°C and 600°C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580°C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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