High-quality AlN films grown on chemical vapor-deposited graphene films
1 Department of Materials and Energy Engineering, Far East University, No.49, Chung Hua Rd., Hsin-Shih. Tainan County 744, Taiwan (R.O.C.)
2 Institute of Mechatronic System Engineering, National University of Tainan, No. 33, Sec. 2, Shu-lin St., Tainan City 700, Taiwan (R.O.C.)
We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.
© Owned by the authors, published by EDP Sciences, 2016
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