Effect of Pulse Number on Dopant Activation in Silicon during Shallow p+/n Junction Formation by Non-Melt Excimer Laser Annealing
1 Malaysia-Japan International Institute of Technology, UniversitiTeknologi Malaysia, Jalan Sultan Yahya Petra, 54100 Kuala Lumpur, Malaysia
2 Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
3 SEN Corporation, SBSTower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097, Japan
Shallow p+/njunctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nanosecondnon-melt excimer laser annealingandrapidthermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are discussed.We found that laser annealing aloneis insufficient to regrow a-Si layer and activate dopant. In contrast, activationwas observed in the samples that were subjected to preannealingrapid thermal annealing followed by non-melt laser annealing; with slight increase of sheet resistance valuewhen the number of laser pulse shot was increased. This is considered due to the interaction of dopant and supersaturated defect in the remaining a-Si layer.The percentage of defect-dopant interaction increased with the pulse shot numbers which contributed to the decrease in activation level.
© Owned by the authors, published by EDP Sciences, 2015
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.