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Si/4H–SiC heterostructure formation using metal-induced crystallization
F. Triendl, G. Pfusterschmied, S. Schwarz, W. Artner and U. Schmid Materials Science in Semiconductor Processing 128 105763 (2021) https://doi.org/10.1016/j.mssp.2021.105763
Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC
F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J.P. Konrath and U. Schmid Materials Science in Semiconductor Processing 131 105888 (2021) https://doi.org/10.1016/j.mssp.2021.105888
On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC