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Cited article:

Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes

F Triendl, G Pfusterschmied, S Schwarz, et al.
Semiconductor Science and Technology 36 (5) 055021 (2021)
https://doi.org/10.1088/1361-6641/abf29b

Si/4H–SiC heterostructure formation using metal-induced crystallization

F. Triendl, G. Pfusterschmied, S. Schwarz, W. Artner and U. Schmid
Materials Science in Semiconductor Processing 128 105763 (2021)
https://doi.org/10.1016/j.mssp.2021.105763

Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H–SiC

F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J.P. Konrath and U. Schmid
Materials Science in Semiconductor Processing 131 105888 (2021)
https://doi.org/10.1016/j.mssp.2021.105888

On the crystallization behavior of sputter-deposited a-Si films on 4H-SiC

F. Triendl, G. Pfusterschmied, G. Fleckl, S. Schwarz and U. Schmid
Thin Solid Films 697 137837 (2020)
https://doi.org/10.1016/j.tsf.2020.137837

Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization

F. Triendl, G. Pfusterschmied, C. Zellner, W. Artner, K. Hradil and U. Schmid
Materials Letters: X 6 100040 (2020)
https://doi.org/10.1016/j.mlblux.2020.100040